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AFT09MS007Nt1 1 rf device data freescale semiconductor, inc. rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet designed for handheld two--way radio applications with frequencies from 136 to 941 mhz. the high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment. narrowband performance (7.5 vdc, i dq = 100 ma, t a =25 ? c, cw) frequency (mhz) g ps (db) ? d (%) p out (w) 870 (1) 15.2 71.0 7.3 wideband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 136?174 0.25 14.6 69.0 7.2 350?470 (2,5) 0.20 15.6 60.9 7.3 450?520 (3,5) 0.22 15.4 56.0 7.5 760?860 (4,5) 0.23 15.1 48.1 7.5 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 870 (1) cw > 65:1 at all phase angles 0.4 (3 db overdrive) 10.8 no device degradation 1. measured in 870 mhz narrowband test circuit. 2. measured in 350?470 mhz uhf broadband reference circuit. 3. measured in 450?520 mhz uhf broadband reference circuit. 4. measured in 760?860 mhz uhf broadband reference circuit. 5. the values shown are the minimum m easured performance numbers across the indicated frequency range. features ? characterized for operation from 136 to 941 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band ? exceptional thermal performance ? extreme ruggedness ? high linearity for: tetra, ssb ? in tape and reel. t1 suffix = 1,000 units, 16 mm tape width, 7--inch reel. typical applications ? output stage vhf band handheld radio ? output stage uhf band handheld radio ? output stage for 700?800 mhz handheld radio document number: AFT09MS007N rev. 1, 4/2014 freescale semiconductor technical data 136?941 mhz, 7 w, 7.5 v wideband rf power ldmos transistor AFT09MS007Nt1 pld--1.5w note: the center pad on the backside of the package is the source terminal for the transistor. figure 1. pin connections drain gate ? freescale semiconductor, inc., 2013?2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT09MS007Nt1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +30 vdc gate--source voltage v gs ?6.0, +12 vdc operating voltage v dd 12.5, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature (1,2) t j ?40 to +150 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 114 0.91 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 74 ? c, 7 w cw, 7.5 vdc, i dq = 100 ma, 870 mhz r ? jc 1.1 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) b, passes 200 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =7.5vdc,v gs =0vdc) i dss ? ? 2 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =110 ? adc) v gs(th) 1.6 2.1 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.1adc) v ds(on) ? 0.12 ? vdc forward transconductance (v ds =7.5vdc,i d =3adc) g fs ? 9.8 ? s dynamic characteristics reverse transfer capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.7 ? pf output capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 56 ? pf input capacitance (v ds =7.5vdc,v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 107 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
AFT09MS007Nt1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) v dd =7.5vdc,i dq = 100 ma, p in =0.22w,f=870mhz common--source amplifier output power p out ? 7.3 ? w drain efficiency ? d ? 71.0 ? % load mismatch/ruggedness (in freescale test fixture, 50 ohm system) i dq = 100 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 870 cw > 65:1 at all phase angles 0.4 (3 db overdrive) 10.8 no device degradation
4 rf device data freescale semiconductor, inc. AFT09MS007Nt1 typical characteristics 160 10 9 90 10 8 10 7 10 5 100 110 120 130 mttf (hours) 140 150 10 6 12 1 200 08 2 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) c iss 100 10 figure 3. drain current versus drain--source voltage t j , junction temperature ( ? c) figure 4. mttf versus junction temperature ? cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. v dd =7.5vdc 0 3 1 v ds , drain--source voltage (volts) 1.5 v gs =3.75vdc 2.5 2 1 234 10 i ds , drain current (amps) 3.5 vdc t a =25 ? c 0 3.5 4 10 46 c oss c rss measured with ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc 0.5 57 689 3.25 vdc 3vdc 2.5 vdc 1.59 amps i d =1.06amps 1.33 amps
AFT09MS007Nt1 5 rf device data freescale semiconductor, inc. 870 mhz narrowband production test fixture figure 5. AFT09MS007Nt1 narrowband test circuit component layout ? 870 mhz AFT09MS007N rev. 2 c1 c2 c3 b1 c4* l1 c6 c8 c7 c9 c5 l2 c14* c15* l3 c16 c13 c11 c12 c10 *c4, c14 and c15 are mounted vertically. d49708 table 6. AFT09MS007Nt1 narrowband test circui t component designations and values ? 870 mhz part description part number manufacturer b1 rf bead, short 2743019447 fair-rite c1 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c2, c12 0.1 ? f chip capacitors cdr33bx104akws kemet c3, c11 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c10, c16 56 pf chip capacitors atc100b560ct500xt atc c5 3.9 pf chip capacitor atc100b3r9ct500xt atc c6, c7 7.5 pf chip capacitors atc100b7r5ct500xt atc c8, c9 6.8 pf chip capacitors atc100b6r8ct500xt atc c13 330 ? f, 35 v electrolytic capacitor mcgpr35v337m10x16-rh multicomp c14, c15 3.6 pf chip capacitors atc100b3r6ct500xt atc l1 8.0 nh inductor a03tklc coilcraft l2 18.5 nh inductor a05tklc coilcraft l3 5.0 nh inductor a02tklc coilcraft pcb rogers ro4350b, 0.030 ? , ? r =3.66 d49708 mtl
6 rf device data freescale semiconductor, inc. AFT09MS007Nt1 z1 0.328 ?? 0.080 ? microstrip z2 0.490 ?? 0.120 ? microstrip z3 0.610 ?? 0.320 ? microstrip z4 0.160 ?? 0.320 ?? 0.620 ? taper z5 0.058 ?? 0.620 ? microstrip z6 0.288 ?? 0.620 ? microstrip z7 0.394 ?? 0.620 ? microstrip z8 0.398 ?? 0.620 ? microstrip rf input c2 v bias v supply c10 rf output z15 l3 c16 z14 z9 0.295 ?? 0.620 ? microstrip z10 0.046 ?? 0.620 ? microstrip z11 0.159 ?? 0.620 ?? 0.320 ? taper z12 0.379 ?? 0.320 ? microstrip z13 0.055 ?? 0.320 ? microstrip z14 0.665 ?? 0.120 ? microstrip z15 0.238 ?? 0.080 ? microstrip figure 6. AFT09MS007Nt1 narrowband test circuit schematic ? 870 mhz table 7. AFT09MS007Nt1 narrowband test circuit microstrips ? 870 mhz description microstrip description microstrip z13 c14 c15 z12 z11 z10 l2 c11 c12 z9 c9 c8 z8 z7 c6 c7 z6 l1 c4 b1 c3 z5 z4 z3 c5 z2 z1 c13 + + c1
AFT09MS007Nt1 7 rf device data freescale semiconductor, inc. typical characteristics ? 870 mhz 0 01234 4 2 6 p out , output power (watts) 8 10 0.5 1.5 2.5 3.5 4.5 12 v dd =7.5vdc,f=870mhz p in =0.11w v gs , gate--source voltage (volts) figure 7. output power versus gate--source voltage at a constant input power figure 8. power gain, output power and drain efficiency versus input power p in , input power (watts) g ps , power gain (db) 0 10 8 0.01 0.7 30 50 40 0 20 16 14 12 18 60 70 90 0.1 ? d , drain efficiency (%) ? d g ps p out v dd =7.5vdc,i dq = 100 ma f = 870 mhz 6 4 2 80 10 p out , output power (watts) p in =0.22w v dd =7.5vdc,i dq = 100 ma, p out =7w f mhz z source ? z load ? 870 0.54 + j1.35 1.31 + j1.93 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. narrowband series equivalent source and load impedance ? 870 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data freescale semiconductor, inc. AFT09MS007Nt1 350?470 mhz uhf bro adband reference circuit table 8. 350?470 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5vdc,i dq = 200 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 350 0.15 16.6 60.9 7.3 410 0.15 16.6 66.5 7.3 470 0.20 15.6 70.1 7.3 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 470 cw > 65:1 at all phase angles 0.4 (3 db overdrive) 10.8 no device degradation
AFT09MS007Nt1 9 rf device data freescale semiconductor, inc. 350?470 mhz uhf bro adband reference circuit figure 10. AFT09MS007Nt1 uhf broadband refe rence circuit compone nt layout ? 350?470 mhz c1 l1 c2 c3 c4 c5 l2 c6 c7 c8 c9 c10 c11 l3 j1 q1 l5 l4 l6 l7 c14 c15 c13 c12 c19 c18 c17 c16 r1 rev. 1 d58008 table 10. AFT09MS007Nt1 uhf broadband reference c ircuit component designa tions and val ues ? 350?470 mhz part description part number manufacturer c1, c10, c19 100 pf chip capacitors atc600f101jt250xt atc c2 10 pf chip capacitor atc600f100jt250xt atc c3 3.0 pf chip capacitor atc600f3r0bt250xt atc c4, c8 27 pf chip capacitors atc600f270jt250xt atc c5 5.1 pf chip capacitor atc600f5r1bt250xt atc c6, c7 30 pf chip capacitors atc600f300jt250xt atc c9 10 nf chip capacitor c1210c103j5gac-tu kemet c11 82 pf chip capacitor atc600f820jt250xt atc c12 240 pf chip capacitor atc600f241jt250xt atc c13 2.2 ? f chip capacitor c3225x7r1h225k250ab tdk c14 0.1 ? f chip capacitor grm21br71h104ka01b murata c15 0.01 ? f chip capacitor grm21br72a103ka01b murata c16 47 pf chip capacitor atc600f470jt250xt atc c17 18 pf chip capacitor atc600f180bt250xt atc c18 7.5 pf chip capacitor atc100a7r5jt150xt atc j1 3--pin header 22-28-8360 molex l1 8.1 nh inductor 0908sq8n1 coilcraft l2 2.55 nh, 3 turn inductor 0906-3jlc coilcraft l3, l4, l5 21.5 nh inductors 0908sq22n coilcraft l6 3.85 nh, 4 turn inductor 0906-4jlc coilcraft l7 8.9 nh inductor 0806sq8n9 coilcraft q1 rf power ldmos transistor AFT09MS007Nt1 freescale r1 62 ? , 1/10 w chip resistor rg2012n-620-b-t1 susumu pcb shengyi s1000-2, 0.020 ? , ? r =4.8 d58008 mtl
10 rf device data freescale semiconductor, inc. AFT09MS007Nt1 figure 11. AFT09MS007Nt1 uhf broadband reference circuit schematic ? 350?470 mhz rf input c6 v bias v supply c12 rf output z25 c19 z23 z22 c16 z21 l5 c13 c14 c15 c5 z4 z3 c1 z2 z1 l1 c2 l2 z5 z6 c3 z7 c4 z8 z9 r1 l3 z10 z11 c11 z16 z17 l6 z20 l4 l7 c18 c17 z12 z13 z14 z15 c7 c8 c10 c9 z18 z19 z24 table 11. AFT09MS007Nt1 uhf broadband reference circuit microstrips ? 350?470 mhz description microstrip description microstrip z18 0.088 ?? 0.170 ? microstrip z19 0.205 ?? 0.046 ? microstrip z20 0.148 ?? 0.046 ? microstrip z21 0.032 ?? 0.046 ? microstrip z22 0.195 ?? 0.046 ? microstrip z23 0.089 ?? 0.046 ? microstrip z24 0.046 ?? 0.046 ? microstrip z25 0.060 ?? 0.034 ? microstrip z1 0.060 ?? 0.034 ? microstrip z2 0.026 ?? 0.046 ? microstrip z3 0.026 ?? 0.046 ? microstrip z4 0.060 ?? 0.046 ? microstrip z5 0.054 ?? 0.046 ? microstrip z6 0.054 ?? 0.046 ? microstrip z7 0.060 ?? 0.046 ? microstrip z8 0.084 ?? 0.046 ? microstrip z9 0.044 ?? 0.046 ? microstrip z10 0.037 ?? 0.046 ? microstrip z11 0.055 ?? 0.046 ? microstrip z12 0.235 ?? 0.046 ? microstrip z13 0.121 ?? 0.300 ? microstrip z14 0.031 ?? 0.300 ? microstrip z15 0.070 ?? 0.146 ? microstrip z16 0.070 ?? 0.146 ? microstrip z17 0.160 ?? 0.170 ? microstrip description microstrip
AFT09MS007Nt1 11 rf device data freescale semiconductor, inc. typical characteristics ? 350?470 mhz uhf broadband reference circuit 320 g ps f, frequency (mhz) figure 12. power gain, drain efficiency and output power versus frequency at a constant input power 12 20 5 90 80 70 60 8 7 6 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 360 380 420 440 480 500 50 p out ,output power (watts) v dd =7.5vdc p in =0.20w i dq = 200 ma p out 18 16 15 14 340 400 460 0 0 v gs , gate--source voltage (volts) figure 13. output power versus gate--source voltage 1 2 34 10 2 8 4 p out , output power (watts) f = 410 mhz v dd =7.5vdc,p in =0.25w 0 0 detail a 1.2 2 0.8 0.4 0.6 0.4 0.8 f = 410 mhz detail a v dd =7.5vdc p in =0.1w p out , output power (watts) v gs , gate--source voltage (volts) 6 12 14 v dd =7.5vdc,p in =0.1w 0.2 v dd =7.5vdc p in =0.25w 5 1.6 figure 14. power gain, drain efficiency and output power versus input power and frequency p in , input power (watts) g ps , power gain (db) 13 16 15 0.01 1 g ps 7.5 20 10 0 2.5 19 18 17 20 40 60 80 0.1 p out v dd =7.5vdc i dq = 200 ma 14 470 mhz ? d p out ,output power (watts) f = 470 mhz 350 mhz 470 mhz 410 mhz 350 mhz 350 mhz 410 mhz 12 5 ? d , drain efficiency (%) 410 mhz
12 rf device data freescale semiconductor, inc. AFT09MS007Nt1 350?470 mhz uhf bro adband reference circuit z o =10 ? f = 350 mhz f = 470 mhz z load z source f = 350 mhz f = 470 mhz v dd =7.5vdc,i dq = 200 ma, p out =7.5w f mhz z source ? z load ? 350 2.7 + j6.6 3.5 + j4.2 370 3.3 + j6.2 3.7 + j4.2 390 3.1 + j5.4 3.5 + j4.0 410 2.6 + j6.1 3.5 + j5.0 430 2.1 + j7.1 3.6 + j5.9 450 2.2 + j7.3 3.6 + j5.6 470 2.0 + j7.7 3.0 + j5.8 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. uhf broadband series equivalent source and load impedance ? 350?470 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT09MS007Nt1 13 rf device data freescale semiconductor, inc. 450?520 mhz uhf bro adband reference circuit table 12. 450?520 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5volts,i dq = 150 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 450 0.21 15.4 57.7 7.5 485 0.21 15.5 56.0 7.5 520 0.18 16.2 66.3 7.5 table 13. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 520 cw > 65:1 at all phase angles 0.2 (3 db overdrive) 10.8 no device degradation
14 rf device data freescale semiconductor, inc. AFT09MS007Nt1 450?520 mhz uhf bro adband reference circuit figure 16. AFT09MS007Nt1 uhf broadband refe rence circuit compone nt layout ? 450?520 mhz AFT09MS007N rev. 2 c1 l1 c2 c4 c3 c5 l3 c6 r1 q1 j1 c7 c8 c9 c10 l4 c16 c15 l7 c14 l6 c13 l5 c11 c12 v gg v dd l2 c17 d49947 table 14. AFT09MS007Nt1 uhf broadband reference c ircuit component designa tions and val ues ? 450?520 mhz part description part number manufacturer c1, c16 100 pf chip capacitors atc600f101jt250xt atc c2 7.5 pf chip capacitor gqm2195c2e7r5bb12d murata c3 5.6 pf chip capacitor atc600f5r6bt250xt atc c4 39 pf chip capacitor atc600f390jt250xt atc c5, c9 240 pf chip capacitors atc600f241jt250xt atc c6, c7 0.1 ? f chip capacitors grm21br71h104ka01b murata c8 0.01 ? f chip capacitor grm21br72a103ka01b murata c10 2.2 ? f chip capacitor grm31cr71h225ka88l murata c11, 12 12 pf chip capacitors atc600f120jt250xt atc c13 8.2 pf chip capacitor atc600f8r2bt250xt atc c14 20 pf chip capacitor atc600f200jt250xt atc c15 2 pf chip capacitor atc600f2r0bt250xt atc c17 47 pf chip capacitor atc600f470jt250xt atc j1 3--pin header 22-28-8360 molex l1 2.55 nh inductor 0906-3jlc coilcraft l2 3.85 nh inductor 0906-4jlc coilcraft l3 22 nh inductor 0908sq22n coilcraft l4, l5 17 nh inductors 0908sq17n coilcraft l6 1.65 nh inductor 0906-2jlc coilcraft l7 8.1 nh inductor 0908sq8r1n coilcraft r1 22 ? , 1/10 w chip resistor rr1220q-220-d susumu q1 rf power ldmos transistor AFT09MS007N freescale pcb shengyi s1000-2, 0.020 ? , ? r =4.8 d49947 mtl
AFT09MS007Nt1 15 rf device data freescale semiconductor, inc. figure 17. AFT09MS007Nt1 uhf broadband reference circuit schematic ? 450?520 mhz table 15. AFT09MS007Nt1 uhf broadband reference circuit microstrips ? 450?520 mhz description microstrip description microstrip z16 0.075 ?? 0.049 ? microstrip z17 0.279 ?? 0.049 ? microstrip z18 0.032 ?? 0.046 ? microstrip z19 0.195 ?? 0.046 ? microstrip z20 0.089 ?? 0.046 ? microstrip z21 0.046 ?? 0.046 ? microstrip z22 0.060 ?? 0.034 ? microstrip z1 0.060 ?? 0.034 ? microstrip z2 0.052 ?? 0.046 ? microstrip z3 0.110 ?? 0.046 ? microstrip z4 0.118 ?? 0.046 ? microstrip z5 0.084 ?? 0.046 ? microstrip z6 0.124 ?? 0.046 ? microstrip z7 0.084 ?? 0.046 ? microstrip z8 0.207 ?? 0.046 ? microstrip z9 0.121 ?? 0.300 ? microstrip z10 0.031 ?? 0.300 ? microstrip z11 0.070 ?? 0.146 ? microstrip z12 0.070 ?? 0.146 ? microstrip z13 0.138 ?? 0.170 ? microstrip z14 0.055 ?? 0.170 ? microstrip z15 0.055 ?? 0.170 ? microstrip description microstrip rf input c6 v bias v supply c10 rf output z22 c16 z21 z20 c12 z19 l5 c9 c8 c7 z12 c5 z4 z3 c1 z2 z1 l1 c2 l2 z5 z6 c3 z7 c4 z8 z9 r1 l3 z10 z11 z13 c11 z14 z15 z16 c13 z17 l6 z18 l4 l7 c15 c17 c14
16 rf device data freescale semiconductor, inc. AFT09MS007Nt1 typical characteristics ? 450?520 mhz uhf broadband reference circuit 440 g ps f, frequency (mhz) figure 18. power gain, output power and drain efficiency versus frequency at a constant input power ? 7.5 v 12 20 7 90 80 70 60 10 9 8 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 460 470 490 500 520 530 50 p out ,output power (watts) v dd =7.5vdc p in =0.25w i dq = 150 ma p out 18 16 15 14 450 480 510 0 0 v gs , gate--source voltage (volts) figure 19. output power versus gate--source voltage 16 1 2 34 10 2 8 4 p out , output power (watts) f = 485 mhz v dd =7.5vdc,p in =0.25w 0 0 detail a 7 12 3 4 6 5 4 8 f = 485 mhz detail a v dd =7.5vdc p in =0.1w p out , output power (watts) v gs , gate--source voltage (volts) 6 12 14 v dd =7.5vdc,p in =0.1w 3 2 1 v dd =7.5vdc p in =0.25w ? d , drain efficiency (%) p out ,output power (watts) figure 20. power gain, output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 0.03 1 f = 520 mhz g ps 8 20 12 0 4 18 17 16 19 40 60 80 0.1 p out v dd =7.5vdc i dq = 150 ma 13 485 mhz 450 mhz 450 mhz 450 mhz 520 mhz 485 mhz ? d 520 mhz 485 mhz
AFT09MS007Nt1 17 rf device data freescale semiconductor, inc. 450?520 mhz uhf bro adband reference circuit z o =10 ? f = 450 mhz f = 530 mhz f = 530 mhz f = 450 mhz z load z source v dd =7.5vdc,i dq = 150 ma, p out =7.5w f mhz z source ? z load ? 450 0.45 + j2.46 1.56 + j1.05 460 0.40 + j2.37 1.52 + j1.24 470 0.40 + j2.97 1.46 + j1.51 480 0.38 + j3.56 1.39 + j1.71 490 0.41 + j4.16 1.35 + j2.06 500 0.51 + j4.79 1.34 + j2.06 510 0.70 + j5.54 1.37 + j2.30 520 0.93 + j6.44 1.40 + j 2.50 530 1.14 + j7.56 1.42 + j2.62 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 21. uhf broadband series equivalent source and load impedance ? 450?520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
18 rf device data freescale semiconductor, inc. AFT09MS007Nt1 760?860 mhz broadband re ference circuit table 16. 760?860 mhz broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5volts,i dq = 150 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 760 0.20 15.3 48.1 7.0 810 0.16 16.3 54.1 7.0 860 0.21 15.1 59.5 7.0 table 17. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 810 cw > 65:1 at all phase angles 0.5 (3 db overdrive) 9.0 no device degradation
AFT09MS007Nt1 19 rf device data freescale semiconductor, inc. 760?860 mhz broadband re ference circuit figure 22. AFT09MS007Nr1 br oadband reference c ircuit component layout ? 760?860 mhz c1 v gg gnd v dd c2 b1 c8 j1 r1 c6 c3 c5 c7 q1 c4 c10 c12 c14 c11 c13 c15 c16 b2 c9 l1 AFT09MS007N rev. 1 d55295 table 18. AFT09MS007Nr1 broadband reference cir cuit component designati ons and value s ? 760?860 mhz part description part number manufacturer b1, b2 rf beads 2743019447 fair-rite c1 10 pf chip capacitor gqm2195c2e100fb15 murata c2 3.9 pf chip capacitor gqm2195c2e3r9bb15 murata c3 7.5 pf chip capacitor gqm2195c2e7r5bb15 murata c4, c13, c16 100 pf chip capacitors gqm2195c2e101gb15 murata c5 8.2 pf chip capacitor gqm2195c2e8r2bb15 murata c6, c7 20 pf chip capacitors gqm2195c2e200gb15 murata c8 1 ? f chip capacitor grm31mr71h105ka88l murata c9 10 ? f chip capacitor grm31cr61h106ka12l murata c10, c11 12 pf chip capacitors gqm2195c2e120fb15 murata c12 5.1 pf chip capacitor gqm2195c2e5r1bb15 murata c14 4.7 pf chip capacitor gqm2195c2e4r7bb15 murata c15 3.9 pf chip capacitor gqm2195c2e3r9bb15 murata j1 3--pin header 22-28-8360 molex l1 22 nh inductor 0908sq-22njl coilcraft q1 rf power ldmos transistor AFT09MS007N freescale r1 200 ? chip resistor crcw0805200rjnea vishay pcb shengyi s1000--2, 0.020 ? , ? r =4.8 d55295 mtl
20 rf device data freescale semiconductor, inc. AFT09MS007Nt1 figure 23. AFT09MS007Nt1 broadband reference circuit schematic ? 760?860 mhz table 19. AFT09MS007Nt1 broadband reference circuit microstrips ? 760?860 mhz description microstrip description microstrip description microstrip rf input v bias v supply c13 rf output z19 c16 z12 c4 z4 z3 c1 z2 z1 c2 z5 z6 c3 z7 c5 z8 r1 z13 c10 z14 z15 c11 z16 c12 z17 z18 c7 c6 z9 b1 c8 z11 z10 l1 b2 c9 c14 c15 z1 0.150 ?? 0.050 ? microstrip z2 0.120 ?? 0.034 ? microstrip z3 0.460 ?? 0.034 ? microstrip z4 0.073 ?? 0.034 ? microstrip z5 0.120 ?? 0.250 ? microstrip z6 0.128 ?? 0.250 ? microstrip z7 0.145 ?? 0.250 ? microstrip z8 0.027 ?? 0.250 ? microstrip z9 0.066 ?? 0.034 ? microstrip z10 0.110 ?? 0.034 ? microstrip z11 0.027 ?? 0.180 ? microstrip z12 0.163 ?? 0.180 ? microstrip z13 0.068 ?? 0.180 ? microstrip z14 0.077 ?? 0.180 ? microstrip z15 0.115 ?? 0.180 ? microstrip z16 0.160 ?? 0.034 ? microstrip z17 0.360 ?? 0.034 ? microstrip z18 0.105 ?? 0.034 ? microstrip z19 0.150 ?? 0.050 ? microstrip * line length includes microstrip bends.
AFT09MS007Nt1 21 rf device data freescale semiconductor, inc. typical characteristi cs ? 760?860 mhz broadband reference circuit 740 g ps f, frequency (mhz) figure 24. power gain, output power and drain efficiency versus frequency at a constant input power ? 7.5 v 10 19 6 65 60 55 10 9 8 ? d , drain efficiency (%) ? d g ps , power gain (db) 17 13 760 780 820 840 860 880 50 p out ,output power (watts) v dd =7.5vdc,p in =0.25w,i dq = 150 ma p out 18 16 15 14 800 12 11 45 7 0 0 v gs , gate--source voltage (volts) figure 25. output power versus gate--source voltage 14 1 2 34 10 2 8 4 p out , output power (watts) f = 810 mhz v dd =7.5vdc,p in =0.25w 0 0 detail a 12 3 6 5 4 7 f = 810 mhz detail a v dd =7.5vdc p in =0.1w p out , output power (watts) v gs , gate--source voltage (volts) 6 12 v dd =7.5vdc,p in =0.1w 3 2 1 v dd =7.5vdc p in =0.25w 0.5 1.5 2.5 3.5 figure 26. power gain, output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 00.6 g ps 6 30 0 3 18 17 16 21 60 75 0.1 p out v dd =7.5vdc i dq = 150 ma 13 ? d 810 mhz ? d , drain efficiency (%) p out ,output power (watts) f = 860 mhz 19 20 0.2 0.3 0.4 0.5 9 12 45 15 760 mhz 810 mhz 860 mhz 760 mhz 860 mhz 760 mhz 810 mhz
22 rf device data freescale semiconductor, inc. AFT09MS007Nt1 760?860 mhz broadband re ference circuit z o =2 ? f = 760 mhz f = 860 mhz z load z source f = 760 mhz f = 860 mhz v dd =7.5vdc,i dq = 150 ma, p out =7w f mhz z source ? z load ? 760 0.77 + j0.62 1.65 ? j0.04 770 0.81 + j0.71 1.70 + j0.10 780 0.81 + j0.79 1.72 + j0.24 790 0.82 + j0.85 1.74 + j0.36 800 0.84 + j0.92 1.77 + j0.49 810 0.85 + j0.98 1.81 + j0.61 820 0.88 + j1.02 1.84 + j0.69 830 0.89 + j1.07 1.87 + 0.79 840 0.91 + 1.13 1.91 + j0.90 850 0.91 + j1.19 1.93 + j0.99 860 0.94 + j1.23 1.99 + j1.08 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 27. broadband series equivalent source and load impedance ? 760?860 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT09MS007Nt1 23 rf device data freescale semiconductor, inc. figure 28. pcb pad layout for pld--1.5w 7.11 0.28 4.91 0.165 3.94 0.155 2.26 0.089 2.16 0.085 solder pad with thermal via structure inches (mm) figure 29. product marking a9m07 nb yyww
24 rf device data freescale semiconductor, inc. AFT09MS007Nt1 package dimensions
AFT09MS007Nt1 25 rf device data freescale semiconductor, inc.
26 rf device data freescale semiconductor, inc. AFT09MS007Nt1
AFT09MS007Nt1 27 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 june 2013 ? initial release of data sheet 1 apr. 2014 ? wideband performance tables 8, 12, 16: updated to include p in for all reference circuits, pp. 1, 8, 13, 18 ? tape and reel information: corrected tape width infor mation from 13--inch reel to 7--inch reel to reflect actual reel size, p. 1 ? maximum ratings table: changed tota l device dissipation value from 182 to 114 w to reflect performance at 150 ? c, p. 2 ? fig. 4, mttf versus junction temperature ? cw: mttf end temperature on graph changed to match maximum operating junction temperature, p. 4 ? table 6, test circuit component designations and values : updated pcb description to reflect most current board specifications from rogers, p. 5 ? added 350?470 mhz uhf broadband reference circuit as follows: -- wideband performance table, p. 1 -- table 8, uhf broadband performance, p. 8 -- table 9, load mismatch/ruggedness, p. 8 -- fig. 10, uhf broadband reference circuit component layout, p. 9 -- table 10, uhf broadband reference circu it component designations and values, p. 9 -- fig. 11, uhf broadband reference circuit schematic, p. 10 -- table 11, uhf broadband reference circuit microstrips, p. 10 -- fig. 12, power gain, drain efficiency and ou tput power versus frequency at a constant input power, p. 11 -- fig. 13, output power versus gate--source voltage, p. 11 -- fig. 14, power gain, drain efficiency and ou tput power versus input power and frequency, p. 11 -- fig. 15, vhf broadband series equi valent source and load impedance, p. 12 ? table 12. load mismatch/ruggedness table: changed test voltage from 9.0 to 10.8 vdc to reflect true capability of the circuit, p. 13
28 rf device data freescale semiconductor, inc. AFT09MS007Nt1 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013?2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT09MS007N rev. 1, 4/2014

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